Research

Research Interests

Semiconductor nanostructures, including quantum dots, nanowires, and two-dimensional atomic crystals

III-nitride materials and optoelectronic devices

Light emitting diodes, lasers, and Si photonics

Artificial photosynthesis, solar fuels, and solar cells

III-nitride and diamond based electronic devices

Selected Recent Publications

  1. D. A. Laleyan, K. Mengle, S. Zhao, Y. Wang, E. Kioupakis, Z. Mi, “Effect of growth temperature on the structural and optical properties of few-layer hexagonal boron nitride by molecular beam epitaxy,” Opt. Exp., vol. 26, 23031, 2018.
  2. S. Zhao, and Z. Mi, “AlGaN Nanowires: Path to Electrically Injected Semiconductor Deep Ultraviolet Lasers,” IEEE J. Quantum Electron., vol. 54, 1, 2018.
  3. S. Meuret, T. Coenen, S. Y. Woo, Y.-H. Ra, Z. Mi, and A. Polman, “Nanoscale Relative Emission Efficiency Mapping Using Cathodoluminescence g(2) Imaging,” Nano Lett., vol. 18, 2288, 2018.
  4. X. Liu, K. Mashooq, T. Szkopek, and Z. Mi, “Improving the Efficiency of Transverse Magnetic Polarized Emission from AlGaN Based LEDs by Using Nanowire Photonic Crystal,” IEEE Photon. J., vol. 10, 4501211, 2018.
  5. X. Liu, A. Pandey, D. A. Laleyan, K. Mashooq, E. T. Reid, W. J. Shin, Z. Mi, “Charge Carrier Transport Properties of Mg-Doped Al0.6Ga0.4N Grown by Molecular Beam Epitaxy,” Semicond. Sci. Technol., vol. 33, 085005, 2018.
  6. B. Zhou, X. Kong, S. Vanka, S. Chu, P. Ghamari, Y. Wang, N. Pant, I. Shih, H. Guo, and Z. Mi, “Gallium nitride nanowire as a linker of molybdenum sulfides and silicon for photoelectrocatalytic water splitting,” Nature Commun., vol. 9, 3856, 2018.
  7. S. Vanka, E. Arca, S. Cheng, K. Sun, G. A. Botton, G. Teeter, and Z. Mi, “High Efficiency Si Photocathode Protected by Multifunctional GaN Nanostructures,” Nano Lett., 10.1021/acs.nanolett.8b03087.
  8. X. Guan, F. A. Chowdhury, Y. Wang, N. Pant, S. Vanka, M. L. Trudeau, L. Guo, L. Vayssieres, and Z. Mi, “Making of an industry-friendly artificial photosynthesis device,” ACS Energy Lett., vol. 3, 2230, 2018.  
  9. F. A. Chowdhury, M. L. Trudeau, H. Guo and Z. Mi, “A Photochemical Diode Artificial Photosynthesis System for Unassisted High Efficiency Overall Pure Water Splitting,” Nature Communications, vol. 9, 1707, 2018.
  10. S. Chu, P. Ou, P. Ghamari, S. Vanka, B. Zhou, I. Shih, J. Song and Z. Mi, “Photoelectrochemical CO2 Reduction into Syngas with the Metal/Oxide Interface,” J. Am. Chem. Soc., vol. 140, 7869, 2018.
  11. S. Chu, S. Vanka, Y. Wang, J. Gim, Y. Wang, Y.-H. Ra, R. Hovden, H. Guo, I. Shih, and Z. Mi, “Solar Water Oxidation by an InGaN Nanowire Photoanode with a Bandgap of 1.7 eV,” ACS Energy Letters, vol. 3, 307, 2018.
  12. Y. Wang, S. Zhao, Y. Wang, D. A. Laleyan, Y. Wu, B. Ouyang, P. Ou, J. Song, and Z. Mi, “Wafer-Scale Synthesis of Monolayer WSe2: A Multi-Functional Photocatalyst for Efficient Overall Pure Water Splitting,” Nano Energy, vol. 51, 54, 2018.
  13. L. Li, Y. Wang, S. Vanka, X. Mu, Z. Mi, and C.J. Li “Nitrogen photofixation over III‐nitride nanowires assisted by ruthenium clusters of low atomicity”, Angewandte Chemie, vol. 129, 8827, 2017.
  14. D. A. Laleyan, S. Zhao, S. Y. Woo, H. N. Tran, H. B. Le, T. Szkopek, H. Guo, G. A. Botton, and Z. Mi “AlN/h-BN heterostructures for Mg dopant-free deep ultraviolet photonics”, Nano Lett., vol. 17, 3737, 2017.
  15. N. H. Tran, B. H. Le, S. Zhao, and Z. Mi, “On the mechanism of highly efficient p-type conduction of Mg-doped ultra-wide-bandgap AlN nanostructures”, Appl. Phys. Lett., vol. 110, 032102, 2017.
  16. S. M. Sadaf, S. Zhao, Y. Wu, Y.-H. Ra, X. Liu, S. Vanka, and Z Mi, “An AlGaN core-shell tunnel junction nanowire light-emitting diode operating in the ultraviolet-C band”, Nano Lett., vol. 17, 1212, 2017.
  17. Y.-H. Ra, R. Wang, S. Y. Woo, M. Djavid, S. M. Sadaf, J. Lee, G. A. Botton, and Z. Mi, “Full-color single nanowire pixels for projection displays,” Nano Lett., vo. 16, 4608, 2016.
  18. S. Zhao, X. Liu, Y. Wu, and Z. Mi, “An electrically pumped 239 nm AlGaN nanowire laser operating at room temperature,” Appl. Phys. Lett., vol. 109, 191106, 2016.
  19. M. G. Kibria, R. Qiao, W. Yang, I. Boukahil, X. Kong, F. A. Chowdhury, M. L. Trudeau, W. Ji, H. Guo, F. J. Himpsel, L. Vayssieres, and Z. Mi, “Atomic scale origin of long term stability and high performance of p-GaN nanowire-arrays for photocatalytic overall pure water splitting”, Adv. Mater., vol. 28, 8388-8397, 2016.
  20. B. Le, S. Zhao, X. Liu, S. Y. Woo, G. A. Botton, and Z. Mi, “Controlled coalescence of AlGaN nanowire arrays: An architecture for dislocation-free planar ultraviolet photonic device applications”, Adv. Mater., vol. 28, 8446-8454, 2016.
  21. K. H. Li, X. Liu, Q. Wang, S. Zhao, and Z. Mi, “Ultralow threshold, electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature,” Nature Nanotech., vol. 10, 140, 2015.