menu MENU
Zetian Mi
(734) 764-3963 2405 EECS1301 Beal AvenueAnn Arbor, MI 48109-2122


Research Interests

Semiconductor nanostructures, including quantum dots, nanowires, and two-dimensional atomic crystals

III-nitride materials and optoelectronic devices

Light emitting diodes, lasers, and Si photonics

Artificial photosynthesis, solar fuels, and solar cells

III-nitride and diamond based electronic devices

Selected Recent Publications

  1. A Pandey, J Gim, R Hovden, Z Mi, An AlGaN tunnel junction light emitting diode operating at 255 nm, Applied Physics Letters 117 (24), 241101, 2020.
  2. P Wang, DA Laleyan, A Pandey, Y Sun, Z Mi, Molecular beam epitaxy and characterization of wurtzite ScxAl1−xN, Applied Physics Letters 116 (15), 151903, 2020. 
  3. P. Wang, A. Pandey, J. Gim, W. J. Shin, E. T. Reid, D. A. Laleyan, Y. Sun, D. Zhang, Z. Liu, Z. Zhong, R. Hovden, Z. Mi, Graphene-assisted molecular beam epitaxy of AlN for AlGaN deep-ultraviolet light-emitting diodes, Applied Physics Letters 116 (17), 171905, 2020.
  4. B. Zhou, P. Ou, N. Pant, S. Cheng, S. Vanka, S. Chu, R. T. Rashid, G. Botton, J. Song, and Z. Mi, Highly efficient binary copper−iron catalyst for photoelectrochemical carbon dioxide reduction toward methane, PNAS, 117 (3) 1330-1338, 2020.
  5. Y. H. Ra, R. T. Rashid, X. H. Liu, S. Sadaf, K. Mashooq, and Z. Mi, An Electrically Pumped Surface-Emitting Semiconductor Green Laser, Science Advances vol. 6, eaav7523, 2020.
  6. Y. Wu, X. Liu, P. Wang, D. A. Laleyan, K. Sun, Y. Sun, C. Ahn, M. Kira, E. Kioupakis, and Z. Mi, Monolayer GaN excitonic deep ultraviolet light emitting diodes, Applied Physics Letters 116 (1), 013101, 2020.
  7. D. A. Laleyan, N. Fernández-Delgado, E. T. Reid, P. Wang, A. Pandey, G. A. Botton, Z. Mi, Strain-free ultrathin AlN epilayers grown directly on sapphire by high-temperature molecular beam epitaxy, Applied Physics Letters 116 (15), 152102, 2020.
  8. B. Shan, S. Vanka, T.-T. Li, L. Troian-Gautier, M. K. Brennaman, Z. Mi, and T. J. Meyer, “Binary molecular-semiconductor p–n junctions for photoelectrocatalytic CO2 reduction,” Nature Energy, vol. 4, 290, 2019.
  9. Y. Sun, W. Shin, D. A. Laleyan, P. Wang, A. Pandey, X. Liu, Y. Wu, M. Soltani, and Z. Mi, “Ultra-high Q Microring Resonators on Single Crystal Aluminum Nitride on Sapphire Platform,” Opt. Lett., 44, 5679, 2019.
  10. A. Pandey, X. Liu, Z. Deng, W. J. Shin, D. A. Laleyan, K. Mashooq, E. T. Reid, E. Kioupakis, P. Bhattacharya, and Z. Mi, “Enhanced doping efficiency of ultrawide band gap semiconductors by metal-semiconductor junction assisted epitaxy,” Phys. Rev. Mater., vol. 3, 053401, 2019.
  11. B Zhou, X Kong, S Vanka, S Cheng, N Pant, S Chu, P Ghamari, Y Wang, G. Botton, H. Cuo, Z. Mi, “A GaN: Sn nanoarchitecture integrated on a silicon platform for converting CO2 to HCOOH by photoelectrocatalysis,” Energy & Environmental Science 12 (9), 2842-2848, 2019.
  12. Mingxin Liu, Yichen Wang, Xianghua Kong, Roksana T Rashid, Sheng Chu, Chen-Chen Li, Zoë Hearne, Hong Guo, Zetian Mi, Chao-Jun Li, Direct catalytic methanol-to-ethanol photo-conversion via methyl carbene, Chem 5 (4), 858-867, 2019.
  13. D. A. Laleyan, K. Mengle, S. Zhao, Y. Wang, E. Kioupakis, Z. Mi, “Effect of growth temperature on the structural and optical properties of few-layer hexagonal boron nitride by molecular beam epitaxy,” Opt. Exp., vol. 26, 23031, 2018.
  14. S. Zhao, and Z. Mi, “AlGaN Nanowires: Path to Electrically Injected Semiconductor Deep Ultraviolet Lasers,” IEEE J. Quantum Electron., vol. 54, 1, 2018.
  15. B. Zhou, X. Kong, S. Vanka, S. Chu, P. Ghamari, Y. Wang, N. Pant, I. Shih, H. Guo, and Z. Mi, “Gallium nitride nanowire as a linker of molybdenum sulfides and silicon for photoelectrocatalytic water splitting,” Nature Commun., vol. 9, 3856, 2018.
  16. S. Vanka, E. Arca, S. Cheng, K. Sun, G. A. Botton, G. Teeter, and Z. Mi, “High Efficiency Si Photocathode Protected by Multifunctional GaN Nanostructures,” Nano Lett., vol. 18, 6530, 2018.
  17. X. Guan, F. A. Chowdhury, Y. Wang, N. Pant, S. Vanka, M. L. Trudeau, L. Guo, L. Vayssieres, and Z. Mi, “Making of an industry-friendly artificial photosynthesis device,” ACS Energy Lett., vol. 3, 2230, 2018.  
  18. F. A. Chowdhury, M. L. Trudeau, H. Guo and Z. Mi, “A Photochemical Diode Artificial Photosynthesis System for Unassisted High Efficiency Overall Pure Water Splitting,” Nature Communications, vol. 9, 1707, 2018.
  19. S. Chu, P. Ou, P. Ghamari, S. Vanka, B. Zhou, I. Shih, J. Song and Z. Mi, “Photoelectrochemical CO2 Reduction into Syngas with the Metal/Oxide Interface,” J. Am. Chem. Soc., vol. 140, 7869, 2018.
  20. L. Li, Y. Wang, S. Vanka, X. Mu, Z. Mi, and C.J. Li “Nitrogen photofixation over III‐nitride nanowires assisted by ruthenium clusters of low atomicity”, Angewandte Chemie, vol. 129, 8827, 2017.
  21. D. A. Laleyan, S. Zhao, S. Y. Woo, H. N. Tran, H. B. Le, T. Szkopek, H. Guo, G. A. Botton, and Z. Mi “AlN/h-BN heterostructures for Mg dopant-free deep ultraviolet photonics”, Nano Lett., vol. 17, 3737, 2017.
  22. N. H. Tran, B. H. Le, S. Zhao, and Z. Mi, “On the mechanism of highly efficient p-type conduction of Mg-doped ultra-wide-bandgap AlN nanostructures”, Appl. Phys. Lett., vol. 110, 032102, 2017.
  23. Y.-H. Ra, R. Wang, S. Y. Woo, M. Djavid, S. M. Sadaf, J. Lee, G. A. Botton, and Z. Mi, “Full-color single nanowire pixels for projection displays,” Nano Lett., vo. 16, 4608, 2016.
  24. S. Zhao, X. Liu, Y. Wu, and Z. Mi, “An electrically pumped 239 nm AlGaN nanowire laser operating at room temperature,” Appl. Phys. Lett., vol. 109, 191106, 2016.
  25. M. G. Kibria, R. Qiao, W. Yang, I. Boukahil, X. Kong, F. A. Chowdhury, M. L. Trudeau, W. Ji, H. Guo, F. J. Himpsel, L. Vayssieres, and Z. Mi, “Atomic scale origin of long term stability and high performance of p-GaN nanowire-arrays for photocatalytic overall pure water splitting”, Adv. Mater., vol. 28, 8388-8397, 2016.
  26. B. Le, S. Zhao, X. Liu, S. Y. Woo, G. A. Botton, and Z. Mi, “Controlled coalescence of AlGaN nanowire arrays: An architecture for dislocation-free planar ultraviolet photonic device applications”, Adv. Mater., vol. 28, 8446-8454, 2016.
  27. K. H. Li, X. Liu, Q. Wang, S. Zhao, and Z. Mi“Ultralow threshold, electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature,” Nature Nanotech., vol. 10, 140, 2015.